Cyclotron Resonance of Two Dimensional Electrons near the Metal-Insulator Transition

被引：0

作者：

Masutomi, Ryuichi ^{[1
]}

Sasaki, Kohei ^{[1
]}

Yasuda, Ippei ^{[1
]}

Sekine, Akihiko ^{[1
]}

Sawano, Kentarou ^{[2
]}

Shiraki, Yasuhiro ^{[2
]}

Okamoto, Tohru ^{[1
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1130033, Japan

[2] Tokyo City Univ, Res Ctr Silicon Nanosci, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Metal-insulator transition; Cyclotron resonance; Si/SiGe; MODULATION-DOPED SYSTEMS; 2; DIMENSIONS; SCATTERING; MOBILITY; QUANTUM; SILICON;

D O I：

10.1063/1.3666361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed the cyclotron resonance measurements on two-dimensional (2D) electrons near the metalinsulator transition. Both the cyclotron scattering time tau(CR) and the transport scattering time tau(t) exhibit a metallic temperature dependence. This fact suggests that the electron state of the metallic phase does not change so much under 100 GHz millimeterwave radiation. The values of tau(t)/tau(CR) are close to unity, indicating that short-range potential fluctuations which lead to large angle scattering are dominant in the metallic phase of Si/SiGe.

引用

页数：2

共 21 条

[1] Colloquium:: Metallic behavior and related phenomena in two dimensions [J].

Abrahams, E ;

Kravchenko, SV ;

Sarachik, MP .

REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :251-266

[2] Flow diagram of the metal-insulator transition in two dimensions [J].

Anissimova, S. ;

Kravchenko, S. V. ;

Punnoose, A. ;

Finkel'Stein, A. M. ;

Klapwijk, T. M. .

NATURE PHYSICS, 2007, 3 (10) :707-710

[3] SMALL-ANGLE SCATTERING IN 2-DIMENSIONAL ELECTRON GASES [J].

COLERIDGE, PT .

PHYSICAL REVIEW B, 1991, 44 (08) :3793-3801

[4] SINGLE-PARTICLE AND TRANSPORT SCATTERING TIMES IN A BACK-GATED GAAS/ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURE [J].

DAS, B ;

SUBRAMANIAM, S ;

MELLOCH, MR ;

MILLER, DC .

PHYSICAL REVIEW B, 1993, 47 (15) :9650-9653

[5]

Das Sarma B., 2000, PHYS REV B, V61, P7838

[6] The so-called two dimensional metal-insulator transition [J].

Das Sarma, S ;

Hwang, EH .

SOLID STATE COMMUNICATIONS, 2005, 135 (9-10) :579-590

[7] Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW B, 2004, 69 (19) :195305-1

[8] Low-density finite-temperature apparent insulating phase in two-dimensional semiconductor systems [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW B, 2003, 68 (19)

[9] Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW LETTERS, 1999, 83 (01) :164-167

[10] QUANTUM AND CLASSICAL MOBILITY DETERMINATION OF THE DOMINANT SCATTERING MECHANISM IN THE TWO-DIMENSIONAL ELECTRON-GAS OF AN ALGAAS/GAAS HETEROJUNCTION [J].

HARRANG, JP ;

HIGGINS, RJ ;

GOODALL, RK ;

JAY, PR ;

LAVIRON, M ;

DELESCLUSE, P .

PHYSICAL REVIEW B, 1985, 32 (12) :8126-8135

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