First observation of bias oscillations in GaN Gunn diodes on GaN substrate

被引：70

作者：

Yilmazoglu, Oktay ^{[1
]}

Mutamba, Kabula ^{[1
]}

Pavlidis, Dimitris ^{[1
]}

Karaduman, Tamer ^{[2
]}

机构：

[1] Tech Univ Darmstadt, Dept High Frequency Elect, D-64283 Darmstadt, Germany

[2] Texas Instruments Deutschland Inc, D-85356 Freising Weihenstephan, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 06期

关键词：

bias oscillation; GaN; Gunn diode;

D O I：

10.1109/TED.2008.921253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the bias oscillation of GaN-based Gunn diodes realized on a n(+)-GaN substrate. Different contact materials, ambient gases, and pulsewidths were used and compared with regard to device stability. A wide negative-differential-resistance (NDR) region was measured for electrical-field values E larger than a threshold field E-th of 150 kV/cm. Electrical fields much higher than the threshold value did not lead to any electromigration effects or discharging problems from the contacts. The drift velocity derived from the current-voltage characteristics, diode geometry, and doping concentration in the active layer was estimated to be 1.9 x 10(7) cm/s. Bias oscillations were obtained for the GaN Gunn diodes in the presence of a series inductance.

引用

页码：1563 / 1567

页数：5

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