Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate

被引：37

作者：

Kang, JoonHyun ^{[1
]}

Atsumi, Yuki ^{[1
]}

Oda, Manabu ^{[1
]}

Amemiya, Tomohiro ^{[1
,2
]}

Nishiyama, Nobuhiko ^{[1
]}

Arai, Shigehisa ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 12期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/JJAP.50.120208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-loss amorphous-silicon (a-Si) waveguides comprising three vertically stacked layers prepared on silicon-on-insulator substrates are demonstrated. We have fabricated multilayer a-Si waveguides and investigated their loss characteristics; this is the first such investigation to our knowledge. All the process temperatures were regulated below 400 degrees C for the complementary metal oxide semiconductor (CMOS) backend process compatibility. When the surface roughness and sidewall roughness were decreased, the propagation loss decreased to 3.7 dB/cm even in the case of the third layer a-Si waveguide. Such low-loss waveguides can be effectively applied to realize multilayer stacked optical devices. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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