Shallow donor muonium states in II-VI semiconductor compounds

被引：62

作者：

Gil, JM ^{[1
]}

Alberto, HV

Vilao, RC

Duarte, JP

de Campos, NA

Weidinger, A

Krauser, J

Davis, EA

Cox, SFJ

机构：

[1] Univ Coimbra, Dept Phys, P-3004516 Coimbra, Portugal

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[3] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England

[4] Rutherford Appleton Lab, ISIS Facil, Chilton OX11 0QX, England

[5] UCL, Dept Phys, London WCE 6BT, England

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.64.075205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental data on shallow donor muonium states in the II-VI semiconductor compounds CdS, CdSe, CdTe, and ZnO are presented. These are characterized by very weak hyperfine interactions amounting to approximately 10(-4) of the free-atom value, and by donor levels with binding energies comparable to those calculated on the hydrogenic model of the shallow centers. The data are discussed in terms of a model generalizing the knowledge of muonium and hydrogen states in tetrahedrally bonded semiconductors. Within this model the shallow muonium state is attributed to muonium bound to the anion of the II-VI compound and located at the antibonding site or close to it in the bond direction.

引用

页码：752051 / 752058

页数：8

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