Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

被引：136

作者：

Ganguly, Satyaki ^{[1
]}

Verma, Jai ^{[1
]}

Li, Guowang ^{[1
]}

Zimmermann, Tom ^{[1
]}

Xing, Huili ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 19期

关键词：

ALGAN/GAN; PASSIVATION; AL2O3; GAN;

D O I：

10.1063/1.3658450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al2O3/III-Nitride heterojunctions, we find interface charges that appear closely linked to the polarization charges of the underlying nitride substrate. Through capacitance-voltage measurement on a series of samples of varying dielectric thicknesses, we find the presence and propose an origin of benign donor-type interface charges (Qit similar to 6 x 10(13) cm(-2)) at the AlN/Al2O3 junction. This interface charge is almost equal to the net polarization charge in AlN. The polarization-related dielectric/AlN interface charge and the role of oxygen in the dielectric as a possible modulation dopant potentially offer opportunities for various device applications. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3658450]

引用

页数：3

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