Opening the Terahertz window with integrated diode circuits

被引:259
作者
Crowe, TW [1 ]
Bishop, WL
Porterfield, DW
Hesler, JL
Weikle, RM
机构
[1] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22903 USA
[2] Virginia Diodes Inc, Charlottesville, VA 22903 USA
关键词
terahertz detectors; terahertz sources; terahertz technology;
D O I
10.1109/JSSC.2005.854599
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific, military and commercial applications. This interest is spurred by the unique properties of this spectral band and the very recent development of convenient terahertz sources and detectors. However, the terahertz band is also extremely challenging, in large part because it spans the transition from traditional electronics to photonics. This paper reviews the importance of this frequency band and summarizes the efforts of scientists and engineers to span the "terahertz technology gap." The emphasis is on solid-state circuits that use nonlinear diodes to translate the functionality of microwave technology to much higher frequencies.
引用
收藏
页码:2104 / 2110
页数:7
相关论文
共 31 条
[1]  
[Anonymous], 1996, P 7 INT S SPAC TER T
[2]   Continuous-wave operation of terahertz quantum-cascade lasers [J].
Barbieri, S ;
Alton, J ;
Dhillon, SS ;
Beere, HE ;
Evans, M ;
Linfield, EH ;
Davies, AG ;
Ritchie, DA ;
Köhler, R ;
Tredicucci, A ;
Beltram, F .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (04) :586-591
[3]   ION TEMPERATURE-MEASUREMENT OF TOKAMAK PLASMAS BY COLLECTIVE THOMSON SCATTERING OF D2O LASER-RADIATION [J].
BEHN, R ;
DICKEN, D ;
HACKMANN, J ;
SALITO, SA ;
SIEGRIST, MR ;
KRUG, PA ;
KJELBERG, I ;
DUVAL, B ;
JOYE, B ;
POCHELON, A .
PHYSICAL REVIEW LETTERS, 1989, 62 (24) :2833-2836
[4]   CUTOFF FREQUENCY OF SUBMILLIMETER SCHOTTKY-BARRIER DIODES [J].
CHAMPLIN, KS ;
EISENSTEIN, G .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (01) :31-34
[5]   Ti quadlevel resist process for the fabrication of NbSIS junctions [J].
Clark, WW ;
Zhang, JZ ;
Lichtenberger, AW .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2003, 13 (02) :115-118
[6]   Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors [J].
David, T ;
Arscott, S ;
Munier, JM ;
Akalin, I ;
Mounaix, P ;
Beaudin, G ;
Lippens, D .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (08) :281-283
[7]  
De Lucia FC, 2002, IEEE MTT S INT MICR, P1579, DOI 10.1109/MWSYM.2002.1012158
[8]  
Dickinson J. C., 2004, 15 INT S SPAC TER TE
[9]   Submillimeter-wave InP Gunn devices [J].
Eisele, H ;
Kamoua, R .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (10) :2371-2378
[10]  
ERICKSON NR, 2002, 13 INT S SPAC TER TE