Ruthenium oxide thin film electrodes prepared by electrostatic spray deposition and their charge storage mechanism

被引:58
作者
Kim, IH [1 ]
Kim, KB
机构
[1] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea
[2] Res Ctr Energy Convers & Storage, Seoul 151744, South Korea
关键词
D O I
10.1149/1.1631823
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
An anhydrous and crystalline ruthenium oxide thin film electrode with high specific capacitance and good high rate capability was prepared by the electrostatic spray deposition technique for use in a supercapacitor electrode material. Various experimental techniques were used to observe physical, chemical, and electrochemical properties of ruthenium oxide. The specific capacitance of anhydrous ruthenium oxide thin film was 500 F/g at 20 mV/s. The cyclic voltammograms with increasing potential scan rate showed that the pseudocapacitive behavior was maintained and the loss of specific capacitance was only 6%, even at high potential scan rates over 200 mV/s. The charge storage mechanism of ruthenium oxide was investigated using an electrochemical quartz crystal microbalance (EQCM). The EQCM results showed that the electrochemical protonation process might be most responsible for the redox reaction of anhydrous ruthenium oxide thin film. (C) 2003 The Electrochemical Society.
引用
收藏
页码:E7 / E13
页数:7
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