Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

被引：0
|
作者：
Lin, Y. C. [1 ]
Lee, M. W. [2 ]
Tsai, M. Y. [3 ]
Wang, C. [1 ]
Yao, J. N. [4 ]
Huang, T. J. [2 ]
Hsu, H. T. [2 ]
Maa, J. S. [3 ]
Chang, Edward Y. [1 ,2 ,4 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan
[3] Natl Chiao Tung Univ, Inst Photon Syst Coll Photon, Hsinchu, Taiwan
[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019) | 2019年
关键词：
copper metallization; AlGaN/GaN HEMT; low noise figure; thermal stability; interconnect metal;
D O I：
10.23919/eumic.2019.8909414
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.
引用
收藏
页码：68 / 71
页数：4
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