Van der Waals integration before and beyond two-dimensional materials

被引:1208
作者
Liu, Yuan [1 ,2 ]
Huang, Yu [1 ,3 ]
Duan, Xiangfeng [3 ,4 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA
[2] Hunan Univ, Sch Phys & Elect, Hunan Key Lab 2D Mat, Changsha, Hunan, Peoples R China
[3] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA
[4] Univ Calif Los Angeles, Dept Chem & Biochem, 405 Hilgard Ave, Los Angeles, CA 90024 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; ALIGNED GRAPHENE TRANSISTORS; ATOMIC LAYER DEPOSITION; PHOTOCURRENT GENERATION; COMPOUND SEMICONDUCTOR; GATE DIELECTRICS; BUILDING-BLOCKS; HIGH-QUALITY; WAFER-SCALE; HETEROSTRUCTURES;
D O I
10.1038/s41586-019-1013-x
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Material integration strategies, such as epitaxial growth, usually involve strong chemical bonds and are typically limited to materials with strict structure matching and processing compatibility. Van der Waals integration, in which pre-fabricated building blocks are physically assembled together through weak van der Waals interactions, offers an alternative bond-free integration strategy without lattice and processing limitations, as exemplified by two-dimensional van der Waals heterostructures. Here we review the development, challenges and opportunities of this emerging approach, generalizing it for flexible integration of diverse material systems beyond two dimensions, and discuss its potential for creating artificial heterostructures or superlattices beyond the reach of existing materials.
引用
收藏
页码:323 / 333
页数:11
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