Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

被引：64

作者：

Zhou, Dayu ^{[1
,2
,6
]}

Mueller, J. ^{[3
]}

Xu, Jin ^{[3
,4
]}

Knebel, S. ^{[2
,6
]}

Braeuhaus, D. ^{[5
]}

Schroeder, U. ^{[2
,6
]}

机构：

[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China

[2] NaMLab gGmbH, D-01187 Dresden, Germany

[3] Fraunhofer Ctr Nanoelect Technol CNT, D-01099 Dresden, Germany

[4] Dalian Neusoft Inst Informat, Dept Embedded Syst Engn, Dalian 116023, Peoples R China

[5] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52074 Aachen, Germany

[6] Qimonda Dresden, Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 08期

关键词：

POLARIZATION REVERSAL; DIELECTRIC-BREAKDOWN; CAPACITORS; PZT;

D O I：

10.1063/1.3688915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688915]

引用

页数：4

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