Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues

被引:12
作者
Grauby, Stephane [1 ]
Salhi, Amine [1 ]
Lopez, Luis-David Patino [1 ]
Claeys, Wilfrid [1 ]
Charlot, Benoit [2 ]
Dilhaire, Stefan [1 ]
机构
[1] Univ Bordeaux 1, Ctr Phys Mol Opt & Hertzienne, F-38031 Grenoble, France
[2] TIMA, F-38031 Grenoble, France
关键词
D O I
10.1016/j.microrel.2007.04.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied temperature variations on two submicrometric dissipative structures with two different techniques. On one hand, we have used a thermoreffectance imaging technique which is a well-known non contact optical method to evaluate temperature variations but whose spatial resolution is limited by diffraction. On the other hand, we have used a scanning thermal microscope (SThM) to study the thermal behaviour of these small dissipative structures. We present qualitative results obtained by both methods and we compare their advantages and drawbacks in terms of calibration and spatial resolution for thermal measurements on microelectronic devices. In particular, we show how the thermoreffectance coefficient can become an advantage to enhance the image contrast and favour the spatial resolution. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:204 / 211
页数:8
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