Pulsed laser crystallization of very thin silicon films

被引：5
作者：
Sameshima, T [1 ]
Watakabe, H
Andoh, N
Higashi, S
机构：
[1] Tokyo Univ Agr & Technol, Tokyo 1848588, Japan
[2] Hiroshima Univ, Higashihiroshima 7398530, Japan
来源：
THIN SOLID FILMS | 2005年 / 487卷 / 1-2期
关键词：
crystallization; disordered states; nano-crystalline; photoluminescence;
D O I：
10.1016/j.tsf.2005.01.036
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report 308-nm-pulsed-XeCl-excimer laser annealing of 2.2-nm-thick silicon films formed on quartz substrates. Crystallization occurred at laser energy of 150 similar to 170 mJ/cm(2). Raman scattering spectra revealed mixed states of small crystalline grains and disordered amorphous regions. Broad optical extinction coefficient was obtained for wavelength from 250 to 400 nm, although it was similar to that of crystalline silicon for wavelength longer than 400 nm. Blue-green photoluminescence was observed for the films annealed at 260 degrees CC for 3 h in 1.3x10(6) Pa H2O vapor after crystallization. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：63 / 66
页数：4
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