Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications

被引：31
作者：
Boltovets, NS
Kholevchuk, VV
Konakova, RV
Mitin, VF
Venger, EF
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03828 Kiev, Ukraine
[2] State Res Inst Orion, UA-03057 Kiev, Ukraine
[3] Microsensor Ltd, UA-04108 Kiev, Ukraine
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 92卷 / 1-3期
关键词：
temperature sensors; germanium films; silicon diodes;
D O I：
10.1016/S0924-4247(01)00562-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New types of miniature (1.2 nun diameter x 1.0 mm. long) temperature sensors based on germanium (Ge) films and silicon diodes have been developed and produced. The Ge-filin microthermometers are intended for use at temperatures from 1 to 400 K, and silicon microdiodes cover operating temperature range from 2 to 600 K. The designs of sensitive elements and miniature package as well as sensor characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：191 / 196
页数：6
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