First-principles study of spin transport in Fe-SiCNT-Fe magnetic tunnel junction

被引：10

作者：

Choudhary, Sudhanshu ^{[1
]}

Jalu, Surendra ^{[1
]}

机构：

[1] NIT Kurukshetra, Sch VLSI Design & Embedded Syst, Kurukshetra 136119, Haryana, India

来源：

PHYSICS LETTERS A | 2015年 / 379卷 / 28-29期

关键词：

Tunnel magnetoresistance (TMR); Spin injection; Spin filter; Carbon nanotube (CNT); Magnetic tunnel junction (MTJ); LARGE MAGNETORESISTANCE; FERROMAGNETIC-FILMS; GRAPHENE NANORIBBON; ELECTRON-TRANSPORT; NANOTUBE; TEMPERATURE; BEHAVIORS; DEFECT;

D O I：

10.1016/j.physleta.2015.04.041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report first-principles calculations of spin-dependent quantum transport in Fe-SiCNT-Fe magnetic tunnel junction (MTJ). Perfect spin filtration effect and substantial tunnel magnetoresistance are obtained, which suggests SiCNTs as a suitable candidate over CNTs for implementing 1D MTJs. The calculated tunnel magnetoresistance is several hundred percent at zero bias voltage, it reduces to nearly zero after the bias voltage of about 1 V. When the orientation of magnetic configurations of both electrodes is parallel, the zero bias spin injection factor is staggering 99% and remains reasonably high in the range of 60%-75% after the bias voltage of 0.6 V. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：1661 / 1665

页数：5

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