Dynamics of ripple formation on silicon surfaces by ultrashort laser pulses in subablation conditions

被引:268
作者
Tsibidis, G. D. [1 ]
Barberoglou, M. [1 ]
Loukakos, P. A. [1 ]
Stratakis, E. [1 ,2 ]
Fotakis, C. [1 ,3 ]
机构
[1] Fdn Res & Technol FORTH, IESL, Iraklion 70013, Crete, Greece
[2] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Crete, Greece
[3] Univ Crete, Dept Phys, Iraklion 71409, Crete, Greece
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 11期
关键词
FEMTOSECOND LASER; MOLTEN SILICON; INCOMPRESSIBLE-FLOW; HEAT-TRANSFER; ABLATION; SEMICONDUCTORS; TRANSPORT; PICOSECOND; DENSITY; TENSION;
D O I
10.1103/PhysRevB.86.115316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An investigation of ultrashort pulsed laser-induced surface modification due to conditions that result in a superheated melted liquid layer and material evaporation are considered. To describe the surface modification occurring after cooling and resolidification of the melted layer and understand the underlying physical fundamental mechanisms, a unified model is presented to account for crater and subwavelength ripple formation based on a synergy of electron excitation and capillary wave solidification. The proposed theoretical framework aims to address the laser-material interaction in subablation conditions and thus the minimal mass removal in combination with a hydrodynamics-based scenario of the crater creation and ripple formation following surface irradiation with single and multiple pulses, respectively. The development of the periodic structures is attributed to the interference of the incident wave with a surface plasmon wave. Details of the surface morphology attained are elaborated as a function of the imposed conditions, and results are tested against experimental data.
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页数:14
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