Reliability and radiation effects in IC technologies

被引：36
作者：
Schrimpf, R. D. [1 ]
Warren, K. M. [1 ]
Weller, R. A. [1 ]
Reed, R. A. [1 ]
Massengill, L. W. [1 ]
Alles, M. L. [1 ]
Fleetwood, D. M. [1 ]
Zhou, X. J. [1 ]
Tsetseris, L. [1 ]
Pantelides, S. T. [1 ]
机构：
[1] Vanderbilt Univ, Nashville, TN 37235 USA
来源：
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年
关键词：
integrated circuits; reliability; radiation effects; single-event effects; total ionizing dose; oxide charge; interface traps;
D O I：
10.1109/RELPHY.2008.4558869
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The reliability of advanced integrated circuit (IC) technologies may be dominated by the interaction of environmental radiation with the devices in the ICs. In particular, single event upsets (SEUs) and soft errors produced by single energetic particles may have a significant impact on the error rate of digital ICs. Additionally, some of the mechanisms responsible for long-term degradation of ICs under normal operating conditions are related to degradation mechanisms produced by ionizing radiation. This paper reviews issues related to prediction of error rates in ICs and discusses the roles of hydrogen in bias-temperature instability and total-ionizing-dose radiation sensitivity.
引用
收藏
页码：97 / 106
页数：10
相关论文
共 95 条
[71]   Timing vulnerability factors of sequentials [J].
Seifert, N ;
Tam, N .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (03) :516-522
[72]   Precursor ion damage and angular dependence of single event gate rupture in thin oxides [J].
Sexton, FW ;
Fleetwood, DM ;
Shaneyfelt, MR ;
Dodd, PE ;
Hash, GL ;
Schanwald, LP ;
Loemker, RA ;
Krisch, KS ;
Green, ML ;
Weir, BE ;
Silverman, PJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :2509-2518
[73]   Local and pseudo SELs observed in digital LSIs and their implication to SEL test method [J].
Shindou, H ;
Kboyama, S ;
Hirao, T ;
Matsuda, S .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2638-2641
[74]   The negative bias temperature instability in MOS devices: A review [J].
Stathis, JH ;
Zafar, S .
MICROELECTRONICS RELIABILITY, 2006, 46 (2-4) :270-286
[75]   Physical mechanisms of negative-bias temperature instability [J].
Tsetseris, L ;
Zhou, XJ ;
Fleetwood, DM ;
Schrimpf, RD ;
Pantelides, ST .
APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3
[76]   Hydrogenation/deuteration of the Si-SiO2 interface:: Atomic-scale mechanisms and limitations -: art. no. 112107 [J].
Tsetseris, L ;
Pantelides, ST .
APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3
[77]   Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias [J].
Tsetseris, L ;
Schrimpf, RD ;
Fleetwood, DM ;
Pease, RL ;
Pantelides, ST .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2265-2271
[78]   Hydrogen-related instabilities in MOS devices under bias temperature stress [J].
Tsetseris, Leonidas ;
Zhou, Xing J. ;
Fleetwood, Daniel M. ;
Schrimpf, Ronald D. ;
Pantelides, Sokrates T. .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2007, 7 (04) :502-508
[79]   Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides [J].
Turowski, M ;
Raman, A ;
Schrimpf, RD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3166-3171
[80]   CREME96: A revision of the Cosmic Ray Effects on Micro-Electronics code [J].
Tylka, AJ ;
Adams, JH ;
Boberg, PR ;
Brownstein, B ;
Dietrich, WF ;
Flueckiger, EO ;
Petersen, EL ;
Shea, MA ;
Smart, DF ;
Smith, EC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) :2150-2160
12345678910