Reliability and radiation effects in IC technologies

被引：36

作者：

Schrimpf, R. D. ^{[1
]}

Warren, K. M. ^{[1
]}

Weller, R. A. ^{[1
]}

Reed, R. A. ^{[1
]}

Massengill, L. W. ^{[1
]}

Alles, M. L. ^{[1
]}

Fleetwood, D. M. ^{[1
]}

Zhou, X. J. ^{[1
]}

Tsetseris, L. ^{[1
]}

Pantelides, S. T. ^{[1
]}

机构：

[1] Vanderbilt Univ, Nashville, TN 37235 USA

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

integrated circuits; reliability; radiation effects; single-event effects; total ionizing dose; oxide charge; interface traps;

D O I：

10.1109/RELPHY.2008.4558869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability of advanced integrated circuit (IC) technologies may be dominated by the interaction of environmental radiation with the devices in the ICs. In particular, single event upsets (SEUs) and soft errors produced by single energetic particles may have a significant impact on the error rate of digital ICs. Additionally, some of the mechanisms responsible for long-term degradation of ICs under normal operating conditions are related to degradation mechanisms produced by ionizing radiation. This paper reviews issues related to prediction of error rates in ICs and discusses the roles of hydrogen in bias-temperature instability and total-ionizing-dose radiation sensitivity.

引用

收藏

页码：97 / 106

页数：10

相关论文

共 95 条

[11] Dose rate effects in bipolar oxides: Competition between trap filling and recombination [J].

Boch, J. ;

Saigne, F. ;

Touboul, A. D. ;

Ducret, S. ;

Carlotti, J. -F. ;

Bernard, M. ;

Schrimpf, R. D. ;

Wrobel, F. ;

Sarrabayrouse, G. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[12] Physical model for the low-dose-rate effect in bipolar devices [J].

Boch, J. ;

Saigne, F. ;

Schrimpf, R. D. ;

Vaille, J. -R. ;

Dusseau, L. ;

Lorfevre, E. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3655-3660

[13] A CONCEPTUAL-MODEL OF SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS [J].

BREWS, JR ;

ALLENSPACH, M ;

SCHRIMPF, RD ;

GALLOWAY, KF ;

TITUS, JL ;

WHEATLEY, CF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1959-1966

[14] Single particle-induced latchup [J].

Bruguier, G ;

Palau, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) :522-532

[15] Upset hardened memory design for submicron CMOS technology [J].

Calin, T ;

Nicolaidis, M ;

Velazco, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) :2874-2878

[16] A low-cost, highly reliable SEU-tolerant SRAM: Prototype and test results [J].

Calin, T ;

Vargas, F ;

Nicolaidis, M ;

Velazco, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1592-1598

[17] Identification and classification of single-event up sets in the configuration memory of SRAM-based FPGAs [J].

Ceschia, M ;

Violante, M ;

Reorda, MS ;

Paccagnella, A ;

Bernardi, P ;

Rebaudengo, M ;

Bortolato, D ;

Bellato, M ;

Zambolin, P ;

Candelori, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) :2088-2094

[18] Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors [J].

Chen, D. K. ;

Mamouni, E. E. ;

Zhou, X. J. ;

Schrimpf, R. D. ;

Fleetwood, D. M. ;

Galloway, K. F. ;

Lee, S. ;

Seo, H. ;

Lucovsky, G. ;

Jun, B. ;

Cressler, J. D. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :1931-1937

[19] Total dose response of ge MOS capacitors with HfO2/Dy2O3 gate stacks [J].

Chen, D. K. ;

Schrimpf, R. D. ;

Fleetwood, D. M. ;

Galloway, K. F. ;

Pantelides, S. T. ;

Dimoulas, A. ;

Mavrou, G. ;

Sotiropoulos, A. ;

Panayiotatos, Y. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (04) :971-974

[20] Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS [J].

DasGupta, S. ;

Witulski, A. F. ;

Bhuva, B. L. ;

Alles, M. L. ;

Reed, R. A. ;

Amusan, O. A. ;

Ahlbin, J. R. ;

Schrimpf, R. D. ;

Massengill, L. W. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2407-2412

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