Reliability and radiation effects in IC technologies

被引：36
作者：
Schrimpf, R. D. [1 ]
Warren, K. M. [1 ]
Weller, R. A. [1 ]
Reed, R. A. [1 ]
Massengill, L. W. [1 ]
Alles, M. L. [1 ]
Fleetwood, D. M. [1 ]
Zhou, X. J. [1 ]
Tsetseris, L. [1 ]
Pantelides, S. T. [1 ]
机构：
[1] Vanderbilt Univ, Nashville, TN 37235 USA
来源：
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年
关键词：
integrated circuits; reliability; radiation effects; single-event effects; total ionizing dose; oxide charge; interface traps;
D O I：
10.1109/RELPHY.2008.4558869
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The reliability of advanced integrated circuit (IC) technologies may be dominated by the interaction of environmental radiation with the devices in the ICs. In particular, single event upsets (SEUs) and soft errors produced by single energetic particles may have a significant impact on the error rate of digital ICs. Additionally, some of the mechanisms responsible for long-term degradation of ICs under normal operating conditions are related to degradation mechanisms produced by ionizing radiation. This paper reviews issues related to prediction of error rates in ICs and discusses the roles of hydrogen in bias-temperature instability and total-ionizing-dose radiation sensitivity.
引用
收藏
页码：97 / 106
页数：10
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