Two-dimensional devices and integration towards the silicon lines

被引:216
作者
Wang, Shuiyuan [1 ]
Liu, Xiaoxian [1 ]
Xu, Mingsheng [2 ]
Liu, Liwei [3 ,4 ]
Yang, Deren [2 ]
Zhou, Peng [1 ,3 ,4 ,5 ]
机构
[1] Fudan Univ, Sch Microelect, Shanghai Key Lab Future Comp Hardware & Syst, Shanghai, Peoples R China
[2] Zhejiang Univ, Sch Micronano Elect & Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou, Peoples R China
[3] Fudan Univ, Frontier Inst Chip & Syst, Shanghai, Peoples R China
[4] Fudan Univ, Qizhi Inst, Shanghai, Peoples R China
[5] Hubei Yangtze Memory Labs, Wuhan, Peoples R China
基金
中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; MOS2; TRANSISTORS; GRAPHENE; RESISTANCE; INSULATORS; PROSPECTS; NETWORKS; CIRCUITS; CONTACTS; ARRAY;
D O I
10.1038/s41563-022-01383-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
引用
收藏
页码:1225 / 1239
页数:15
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