Features of Simultaneous Ground- and Excited-State Lasing in Quantum Dot Lasers

被引：13

作者：

Zhukova, A. E. ^{[1
,2
,4
]}

Maximov, M. V. ^{[1
,2
]}

Shernyakov, Yu. M. ^{[1
,2
]}

Livshits, D. A. ^{[3
]}

Savelyev, A. V. ^{[1
,4
]}

Zubov, F. I. ^{[1
]}

Klimenko, V. V. ^{[1
]}

机构：

[1] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, Russian Acad Sci, St Petersburg 194021, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Innolume GmbH, D-44263 Dortmund, Germany

[4] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

RELAXATION; POWER;

D O I：

10.1134/S1063782612020285

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lasing spectra and light-current (L-I) characteristics of an InAs/InGaAs quantum dot laser emitting in the simultaneous lasing mode at the ground- and excited-state optical transitions are studied. Lasing and spontaneous emission spectra are compared. It is shown that ground-state quenching of lasing is observed even in the absence of active region self-heating or an increase in homogeneous broadening with growth in the current density. It is found that the intensities of both lasing and spontaneous emission at the ground-state transition begin to decrease at a pump intensity that significantly exceeds the two-level lasing threshold. It is also found that different groups of quantum dots are involved in ground- and excited-state lasing.

引用

页码：231 / 235

页数：5

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