Features of Simultaneous Ground- and Excited-State Lasing in Quantum Dot Lasers

被引：13

作者：

Zhukova, A. E. ^{[1
,2
,4
]}

Maximov, M. V. ^{[1
,2
]}

Shernyakov, Yu. M. ^{[1
,2
]}

Livshits, D. A. ^{[3
]}

Savelyev, A. V. ^{[1
,4
]}

Zubov, F. I. ^{[1
]}

Klimenko, V. V. ^{[1
]}

机构：

[1] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, Russian Acad Sci, St Petersburg 194021, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Innolume GmbH, D-44263 Dortmund, Germany

[4] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

RELAXATION; POWER;

D O I：

10.1134/S1063782612020285

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lasing spectra and light-current (L-I) characteristics of an InAs/InGaAs quantum dot laser emitting in the simultaneous lasing mode at the ground- and excited-state optical transitions are studied. Lasing and spontaneous emission spectra are compared. It is shown that ground-state quenching of lasing is observed even in the absence of active region self-heating or an increase in homogeneous broadening with growth in the current density. It is found that the intensities of both lasing and spontaneous emission at the ground-state transition begin to decrease at a pump intensity that significantly exceeds the two-level lasing threshold. It is also found that different groups of quantum dots are involved in ground- and excited-state lasing.

引用

页码：231 / 235

页数：5

共 27 条

[1] Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
Shernyakov, Yu. M.
Maksimov, M. V.
Zhukov, A. E.
Savelyev, A. V.
Korenev, V. V.
Zubov, F. I.
Gordeev, N. Yu.
Livshits, D. A.
SEMICONDUCTORS, 2012, 46 (10) : 1331 - 1334
[2] Ground- and excited-state scattering potentials for the stopping of protons in an electron gas
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Arista, N. R.
Schiwietz, G.
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 2017, 50 (18)
[3] Analytical approach to the multi-state lasing phenomenon in quantum dot lasers
Korenev, V. V.
Savelyev, A. V.
Zhukov, A. E.
Omelchenko, A. V.
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APPLIED PHYSICS LETTERS, 2013, 102 (11)
[4] First-Principles Studies of the Ground- and Excited-State Properties of Quantum Dots Functionalized by Ru(II)-Polybipyridine
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[5] Excited-state indirect excitons in GaAs quantum dot molecules
Heyn, Ch.
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Ungeheuer, A.
Graefenstein, A.
Hansen, W.
PHYSICAL REVIEW B, 2017, 96 (08)
[6] Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
Korenev, V. V.
Savelyev, A. V.
Zhukov, A. E.
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Maximov, M. V.
SEMICONDUCTORS, 2013, 47 (10) : 1397 - 1404
[7] The Influence of Carrier Dynamics on Double-State Lasing in Quantum Dot Lasers at Variable Temperature
Korenev, V. V.
Savelyev, A. V.
Zhukov, A. E.
Omelchenko, A. V.
Maximov, M. V.
16TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB/2013), 2014, 572
[8] Investigation of modulation characteristics of high speed InGaAs/GaAs double state lasing quantum dot lasers
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JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2016, 18 (5-6): : 480 - 489
[9] Excited-state spectroscopy of single lateral self-assembled InGaAs quantum dot molecules
Heldmaier, M.
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Hermannstaedter, C.
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Rossbach, R.
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PHYSICAL REVIEW B, 2012, 85 (11)
[10] The analytical approach to the multi-state lasing phenomenon in undoped and p-doped InAs/InGaAs semiconductor quantum dot lasers
Korenev, Vladimir V.
Savelyev, Artem V.
Zhukov, Alexey E.
Omelchenko, Alexander V.
Maximov, Mikhail V.
SEMICONDUCTOR LASERS AND LASER DYNAMICS VI, 2014, 9134

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