Critical aspects of alloying and stress relaxation in Ge/Si(100) islands

被引：39

作者：

Hadjisavvas, G ^{[1
]}

Kelires, PC ^{[1
]}

机构：

[1] Univ Crete, Dept Phys, Iraklion 71003, Crete, Greece

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.72.075334

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report Monte Carlo simulations of alloying and stress relaxation in Ge/Si(100) dome and pyramidal islands. In both cases, the simulated composition profiles consist of inhomogeneous Si-rich cores and outer Ge-rich shells. Comparison to experimentally deduced profiles gives us the opportunity to discuss some of the most controversial aspects of the problem. We propose that, in addition to surface events and kinetically driven alloying, volume diffusion and stress-driven intermixing need to be considered for a global interpretation of experimental results.

引用

页数：4

共 25 条

[1] Probing the lateral composition profile of self-assembled islands [J].

Denker, U ;

Stoffel, M ;

Schmidt, OG .

PHYSICAL REVIEW LETTERS, 2003, 90 (19) :4

[2] Stress and composition of C-induced Ge dots on Si(100) [J].

Hadjisavvas, G ;

Sonnet, P ;

Kelires, PC .

PHYSICAL REVIEW B, 2003, 67 (24)

[3]

HIRTH JP, 1982, THEORY DISCOLATIONS

[4] Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures [J].

Kamins, TI ;

Carr, EC ;

Williams, RS ;

Rosner, SJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :211-219

[5] EQUILIBRIUM ALLOY PROPERTIES BY DIRECT SIMULATION - OSCILLATORY SEGREGATION AT THE SI-GE(100) 2X1 SURFACE [J].

KELIRES, PC ;

TERSOFF, J .

PHYSICAL REVIEW LETTERS, 1989, 63 (11) :1164-1167

[6] MONTE-CARLO STUDIES OF TERNARY SEMICONDUCTOR ALLOYS - APPLICATION TO THE SI1-X-YGEXCY SYSTEM [J].

KELIRES, PC .

PHYSICAL REVIEW LETTERS, 1995, 75 (06) :1114-1117

[7] A constrained-equilibrium Monte Carlo method for quantum dots - The problem of intermixing [J].

Kelires, PC .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (17) :S1485-S1501

[8] INTERFACIAL STABILITY AND INTERMIXING IN THIN-LAYER SI(N)/GE(N) SUPERLATTICES [J].

KELIRES, PC .

PHYSICAL REVIEW B, 1994, 49 (16) :11496-11499

[9] Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots [J].

Liu, N ;

Tersoff, J ;

Baklenov, O ;

Holmes, AL ;

Shih, CK .

PHYSICAL REVIEW LETTERS, 2000, 84 (02) :334-337

[10] 3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100) [J].

Malachias, A ;

Kycia, S ;

Medeiros-Ribeiro, G ;

Magalhaes-Paniago, R ;

Kamins, TI ;

Williams, RS .

PHYSICAL REVIEW LETTERS, 2003, 91 (17)

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