Effect of pyrolysis temperature on the characteristics of PZT films deposited by the sol-gel method

被引:36
|
作者
Law, CW
Tong, KY [1 ]
Li, JH
Li, K
机构
[1] Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Peoples R China
[2] Jiangsu Inst Petrochem Technol, Funct Mat Lab, Jiangsu, Peoples R China
关键词
ceramics; dielectrics; ferroelectric properties;
D O I
10.1016/S0040-6090(98)00813-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the effect of pyrolysis temperatures between 300 and 600 degrees C on the materials and ferroelecrric characteristics of PZT films deposited by the sol-gel method. SEM showed that the grain size increased slightly with the pyrolysis temperature. X-ray diffraction showed that the texture was mainly [111] orientation for pyrolysis temperatures below 400 degrees C, but changed to [100] orientation for pyrolysis temperatures at or above 400 degrees C. Pyrochlore phases also existed in films pyrolyzed at temperatures above 400 degrees C. At a final annealing temperature of 700 degrees C for 10 min, the remanent polarization P-r has a maximum value at 400 degrees C pyrolysis temperature. Lf the annealing time was elongated, the value of P-r for films pyrolyzed at higher temperatures could be increased. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:220 / 224
页数:5
相关论文
共 50 条
  • [1] Effect of pyrolysis temperature on the characteristics of PZT films deposited by the sol-gel method
    Hong Kong Polytechnic Univ, Hong Kong, Hong Kong
    Thin Solid Films, 1-2 (220-224):
  • [2] Effect of pyrolysis atmosphere on properties of BLT ferroelectric films deposited by sol-gel method
    Department of Electronics, Huazhong Univ. of Sci. and Technol., Wuhan 430074, China
    Gongneng Cailiao, 2008, 3 (376-378):
  • [3] Characteristics of sol-gel deposited alumina films
    Murali, K. R.
    Thirumoorthy, P.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 500 (01) : 93 - 95
  • [4] Effect of heat treatment on preferred orientation of sol-gel deposited PZT thin films
    Wang, ZJ
    Maeda, R
    Kikuchi, K
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2000, 64 (05) : 383 - 386
  • [5] Orientation control of low temperature deposited sol-gel PZT52/48 films
    Marshall, JM
    Zhang, Q
    Huang, Z
    Whatmore, RW
    FERROELECTRICS, 2005, 318 : 41 - 48
  • [6] Effect of annealing temperature on ferroelectric electron emission of sol-gel PZT films
    Yaseen, Muhammad
    Chen, Xiaofeng
    Ren, Wei
    Feng, Yujun
    Shi, Peng
    Wu, Xiaoqing
    Zhu, Weiguang
    CERAMICS INTERNATIONAL, 2013, 39 : S471 - S474
  • [7] Effect of annealing temperature on physical characteristics of CuO films deposited by sol-gel spin coating
    Al Armouzi, Naoual
    El Hallani, Ghizlane
    Liba, Ahmed
    Zekraoui, Mustapha
    Hilal, Hikmat S.
    Kouider, Noureedine
    Mabrouki, Mustapha
    MATERIALS RESEARCH EXPRESS, 2019, 6 (11)
  • [8] Effect of prebaking temperature on structure and ferroelectric properties of PZT thin films prepared by sol-gel method
    Ono, S
    Maeda, M
    Osaka, T
    Koiwa, I
    Kanehara, T
    Mita, J
    Hashimoto, A
    Sawada, Y
    DENKI KAGAKU, 1996, 64 (11): : 1166 - 1173
  • [9] Optical properties of PZT 65/35 thin films deposited by sol-gel
    Boerasu, I
    Vasilevskiy, MI
    Pereira, M
    Costa, MF
    Gomes, MJM
    FERROELECTRICS, 2002, 268 : 187 - 192