Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates

被引：46
|
作者：
Härkönen, J [1 ]
Tuominen, E
Tuovinen, E
Mehtälä, P
Lassila-Perini, K
Ovchinnikov, V
Heikkilä, P
Yli-Koski, M
Palmu, L
Kallijärvi, S
Nikkilä, H
Anttila, O
Niinikoski, T
Eremin, V
Ivanov, A
Verbitskaya, E
机构：
[1] CERN, EP, Helsinki Inst Phys, CH-1211 Geneva 23, Switzerland
[2] Helsinki Univ Technol, Ctr Microelect, Espoo 02015, Finland
[3] Helsinki Univ Technol, Electron Phys Lab, Espoo 02015, Finland
[4] Univ Oulu, Microelect Instrumentat Lab, Kemi 94600, Finland
[5] Okmet Oyj, Vantaa 01301, Finland
[6] CERN, EP, Geneva, Switzerland
[7] Ioffe PTI, St Petersburg, Russia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 514卷 / 1-3期
关键词：
Cz-Si; detector; radiation hardness;
D O I：
10.1016/j.nima.2003.08.102
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have processed large-area strip sensors on silicon wafers grown by the magnetic Czochralski (MCZ) method. The n-type MCZ silicon wafers manufactured by Okmetic Oyj have nominal resistivity of 900 Omega cm and oxygen concentration of less than 10 ppma. The Photoconductive Decay (PCD) measurements, current voltage measurements and capacitance-voltage measurements were made to characterise the samples. The leakage current of 3 muA at 900 V bias voltage was measured on the 32.5 cm(2) detector. Detector depletion took place at about 420 V. According to PCD measurements, process induced contamination was effectively bound and neutralised by the oxygen present in Czochralski silicon. During the sample processing, the silicon resistivity increased in spite of the lack of specific donor-killing heat treatment. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：173 / 179
页数：7
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