Investigations of the fine structure of I(V) characteristics for highly oriented pyrolitic graphite surface by means of STM/STS at room temperature

被引：5
作者：
Olejniczak, W [1 ]
Klusek, Z [1 ]
Bieniecki, M [1 ]
机构：
[1] Univ Lodz, Dept Solid State Phys, PL-90283 Lodz, Poland
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / Suppl 1期
关键词：
D O I：
10.1007/s003390051128
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A comprehensive room-temperature study of the electron tunneling in the STM junction between a tungsten tip and a highly oriented pyrolitic graphite surface is presented. The conductance versus voltage dependencies dI/dV(V) obtained by numerical filtration and differentiation of the direct measured current - voltage characteristics I(V) have a number of narrow resistive peaks at the bias voltages located near the corresponding tungsten and HOPG phonon frequencies. The plotted histograms of the frequency distribution of the global minimum in dI/dV(V) curves enable us to draw a conclusion on the phonon origin of this fine structure. A model that could qualitatively explain the observed data is discussed.
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页码：S191 / S196
页数：6
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