Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers

被引：78

作者：

Jinno, Riena ^{[1
]}

Uchida, Takayuki ^{[1
]}

Kaneko, Kentaro ^{[1
,2
]}

Fujita, Shizuo ^{[1
,2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158520, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 07期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; OXIDE THIN-FILMS; MU-M; GROWTH; ALPHA-AL2O3;

D O I：

10.7567/APEX.9.071101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Efforts have been made to reduce the density of defects in corundum-structured alpha-Ga2O3 thin films on sapphire substrates by applying quasi-graded alpha-(AlxGa1-x)(2)O-3 buffer layers. Transmission electron microscopy images revealed that most strains were located in the alpha-(AlxGa1-x)(2)O-3 buffer layers, and that the total density of dislocations in the alpha-Ga2O3 thin films was successfully decreased by more than one order of magnitude compared with that without buffer layers, that is, the screw and edge dislocation densities were about 3 x 10(8) and 6 x 10(8) cm(-2), respectively. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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