Cryogenic scanning force microscopy of quantum Hall samples: Adiabatic transport originating in anisotropic depletion at contact interfaces

被引:25
作者
Dahlem, F. [1 ]
Ahlswede, E. [1 ]
Weis, J. [1 ]
v. Klitzing, K. [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
关键词
POTENTIAL MICROSCOPY; EDGE; RESISTANCE; REGIME;
D O I
10.1103/PhysRevB.82.121305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Anisotropic magnetoresistances and intrinsic adiabatic transport features are generated on quantum Hall samples based on an (Al,Ga)As/GaAs heterostructure with alloyed Au/Ge/Ni contacts. We succeed to probe the microscopic origin of these transport features with a cryogenic scanning force microscope by measuring the local potential distribution within the two-dimensional electron system (2DES). These local measurements reveal the presence of an incompressible strip in front of contacts with insulating properties depending on the orientation of the contact/2DES interface line relatively to the crystal axes of the heterostructure. Such an observation gives another microscopic meaning to the term "nonideal contact" used in context with the Landauer-Buttiker formalism applied to the quantum Hall effect.
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页数:4
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