Orientation of Ni-Cr thin films with an underlying Ti layer

被引:7
作者
Iida, A [1 ]
Nakamura, S [1 ]
机构
[1] TOSHIBA CO LTD,ENVIRONM ENGN LAB,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 3A期
关键词
thin film; Ni-Cr; Ti; HRTEM; preferred orientation;
D O I
10.1143/JJAP.35.L335
中图分类号
O59 [应用物理学];
学科分类号
摘要
Insertion of a Ti thin film between an 80 wt% Ni-20 wt% Cr thin film and a glass-coated Al2O3 substrate resulted in a strongly (111) preferred orientation in the Ni-Cr thin film: which was deposited on the Ti layer by continuous sputtering. The preferred orientation and the cross section were observed by X-ray diffractometer (XRD) and high-resolution transmission electron microscopy (RRTEM), respectively. The Ni-Cr thin film was found to have a columnar structure and the column axes were normal to the substrate. In addition, the (111) orientation of Ni-Cr was observed to be almost parallel to the (100) orientation of Ti.
引用
收藏
页码:L335 / L337
页数:3
相关论文
共 5 条
[1]  
FEIL M, 1991, P 41 ELECT COMP TECH, P134
[2]   NEW ASPECTS IN VOLMER-WEBER 3D GROWTH - AN XPS INTENSITY STUDY APPLIED TO THIN-FILMS OF AU AND CE ON POLYPROPYLENE [J].
HEUBERGER, M ;
DIETLER, G ;
SCHLAPBACH, L .
SURFACE SCIENCE, 1994, 314 (01) :13-22
[3]  
ISEKI Y, 1992, P ELECTR C, P973, DOI 10.1109/ECTC.1992.204323
[4]   SUBSTRATE EFFECT ON TEXTURIZED MICROSTRUCTURES IN NI-CR THIN-FILMS [J].
MENGUCCI, P ;
COSTATO, M ;
MAJNI, G .
THIN SOLID FILMS, 1992, 209 (01) :67-72
[5]   GAAS MULTICHIP MODULE FOR A PARALLEL PROCESSING SYSTEM [J].
MIYAGI, T ;
ITOH, K ;
KIMIJIMA, S ;
SUDO, T .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1990, 13 (04) :828-832