Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy

被引：0

作者：

Taheri, Mohammad M. ^{[1
]}

Truong, Triet M. ^{[1
]}

Fields, Shannon ^{[2
]}

Shafarman, William N. ^{[2
]}

McCandless, Brian E. ^{[2
]}

Baxter, Jason B. ^{[1
]}

机构：

[1] Drexel Univ, Dept Chem & Biol Engn, Philadelphia, PA 19104 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年

关键词：

cadmium telluride; thin film devices; photovoltaic cells; semiconductor materials; carrier dynamics;

D O I：

10.1109/PVSC43889.2021.9518559

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. The measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, similar to 6x10(4) cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.

引用

页码：648 / 651

页数：4

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