Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy

被引：0
|
作者：
Taheri, Mohammad M. [1 ]
Truong, Triet M. [1 ]
Fields, Shannon [2 ]
Shafarman, William N. [2 ]
McCandless, Brian E. [2 ]
Baxter, Jason B. [1 ]
机构：
[1] Drexel Univ, Dept Chem & Biol Engn, Philadelphia, PA 19104 USA
[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
来源：
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年
关键词：
cadmium telluride; thin film devices; photovoltaic cells; semiconductor materials; carrier dynamics;
D O I：
10.1109/PVSC43889.2021.9518559
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. The measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, similar to 6x10(4) cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.
引用
收藏
页码：648 / 651
页数：4
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