Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

被引：72

作者：

Karbasian, Golnaz ^{[1
]}

dos Reis, Roberto ^{[2
]}

Yadav, Ajay K. ^{[1
]}

Tan, Ava J. ^{[1
]}

Hu, Chenming ^{[1
]}

Salahuddin, Sayeef ^{[1
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Mol Foundry, Berkeley, CA 94720 USA

[3] Lawrence Berkeley Natl Lab, Energy Storage & Distributed Resources Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 02期

关键词：

NEGATIVE CAPACITANCE; HFO2; FILMS; ZRO2;

D O I：

10.1063/1.4993739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN. Published by AIP Publishing.

引用

页数：4

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