Hydrogen passivation at the Al/H:Si(111)-(1x1) interface

被引：7

作者：

Grupp, C ^{[1
]}

Taleb-Ibrahimi, A ^{[1
]}

机构：

[1] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.581400

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A direct comparative study of the interfaces AL/H:Si(111)-(1x1) and Al/Si(111)-(7x7) by means of high-resolution photoelectron spectroscopy and Auger spectroscopy reveals large differences for aluminum coverages below Theta-5 ML. Hydrogen termination suppresses the formation of interfacial AlSi and promotes island growth. The Schottky barrier formation is delayed compared to the Al/Si(111)-(7x7) interface. For high coverages the Schottky barrier is the same for both interfaces. (C) 1998 Americnn Vacuum Society. [S0734-2101(98)06904-8].

引用

页码：2683 / 2686

页数：4

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