Hydrogen passivation at the Al/H:Si(111)-(1x1) interface

被引：7
|
作者：
Grupp, C [1 ]
Taleb-Ibrahimi, A [1 ]
机构：
[1] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1998年 / 16卷 / 04期
关键词：
D O I：
10.1116/1.581400
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A direct comparative study of the interfaces AL/H:Si(111)-(1x1) and Al/Si(111)-(7x7) by means of high-resolution photoelectron spectroscopy and Auger spectroscopy reveals large differences for aluminum coverages below Theta-5 ML. Hydrogen termination suppresses the formation of interfacial AlSi and promotes island growth. The Schottky barrier formation is delayed compared to the Al/Si(111)-(7x7) interface. For high coverages the Schottky barrier is the same for both interfaces. (C) 1998 Americnn Vacuum Society. [S0734-2101(98)06904-8].
引用
收藏
页码：2683 / 2686
页数：4
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