Estimation and control of surface roughness in thin film growth using kinetic Monte-Carlo models

被引:78
作者
Lou, YM [1 ]
Christofides, PD [1 ]
机构
[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
基金
美国国家科学基金会;
关键词
thin film growth; multiscale modeling; model-based estimation; feedback control;
D O I
10.1016/S0009-2509(03)00166-0
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
In this work, we present an approach to estimation and control of surface roughness in thin film growth using kinetic Monte-Carlo (MC) models. We use the process of thin film growth in a stagnation flow geometry and consider atom adsorption, desorption and surface migration as the three processes that shape film micro-structure. A multiscale model that involves coupled partial differential equations (PDEs) for the modeling of the gas phase and a kinetic MC simulator, based on a high-order lattice, for the modeling of the film micro-structure, is used to simulate the process. A roughness estimator is constructed that allows computing estimates of the surface roughness at a time-scale comparable to the real-time evolution of the process using discrete on-line roughness measurements. The estimator involves a kinetic MC simulator based on a reduced-order lattice, an adaptive filter used to reduce roughness stochastic fluctuations and an error compensator used to reduce the error between the roughness estimates and the discrete roughness measurements. The roughness estimates are fed to a proportional-integral (PI) controller. Application of the proposed estimator/controller structure to the multiscale process model demonstrates successful regulation of the surface roughness at the desired value. The proposed approach is shown to be superior to PI control with direct use of the discrete roughness measurements. The reason is that the available measurement techniques do not provide measurements at a frequency that is comparable to the time-scale of evolution of the dominant film growth dynamics. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3115 / 3129
页数:15
相关论文
共 29 条
  • [1] Macro- and micro-scale simulation of growth rate and composition in MOCVD of yttria-stabilized zirconia
    Akiyama, Y
    Imaishi, N
    Shin, YS
    Jung, SC
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 241 (03) : 352 - 362
  • [2] Plasma enhanced chemical vapor deposition: Modeling and control
    Armaou, A
    Christofides, PD
    [J]. CHEMICAL ENGINEERING SCIENCE, 1999, 54 (15-16) : 3305 - 3314
  • [3] ARMAOU A, 2002, A I CH E ANN M IND
  • [4] Output feedback control of parabolic PDE systems with nonlinear spatial differential operators
    Baker, J
    Christofides, PD
    [J]. INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 1999, 38 (11) : 4372 - 4380
  • [5] Materials characterization of alternative gate dielectrics
    Busch, BW
    Pluchery, O
    Chabal, YJ
    Muller, DA
    Opila, RL
    Kwo, JR
    Garfunkel, E
    [J]. MRS BULLETIN, 2002, 27 (03) : 206 - 211
  • [6] Ultrathin zirconium oxide films as alternative gate dielectrics
    Chang, JP
    Lin, YS
    Berger, S
    Kepten, A
    Bloom, R
    Levy, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2137 - 2143
  • [7] CHEN S, 2001, J COMPUT PHYS, V167, P1
  • [8] Christofides P. D., 2001, SYS CON FDN
  • [9] THEORETICAL FOUNDATIONS OF DYNAMIC MONTE-CARLO SIMULATIONS
    FICHTHORN, KA
    WEINBERG, WH
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1991, 95 (02) : 1090 - 1096
  • [10] SINGLE WAFER PROCESSING IN STAGNATION POINT FLOW CVD REACTOR - PROSPECTS, CONSTRAINTS AND REACTOR DESIGN
    GADGIL, PN
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (02) : 171 - 177