Analysis of transient behavior of AlGaN/GaN MOSHFET

被引：10

作者：

Hayashi, Y. ^{[1
]}

Kishimoto, S. ^{[1
,2
]}

Mizutani, T. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 11期

关键词：

HfO2/AlGaN/GaN MOSHFET; Device simulation; Interface trap; Transient response; FIELD-EFFECT TRANSISTORS; CHANNEL GAN MOSFETS; ELECTRON-TRANSPORT; GATE STRUCTURE; OXIDE; VOLTAGE; HFO2;

D O I：

10.1016/j.sse.2010.07.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold voltage of HfO2/AlGaN/GaN MOSHFETs was dependent on the time after the bias stress and the transconductance decreased at large gate voltages. These behaviors were explained based on the two-dimensional device simulation assuming three trap levels of E-C-E-T = 0.4, 0.765, 1.65 eV with short, medium and long time constants at the HfO2/AlGaN interface, which were obtained based on the analytical consideration of the experimental results. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1451 / 1456

页数：6

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