Self-Heating in 28 nm Bulk and FDSOI

被引：0

作者：

Makovejev, S. ^{[1
]}

Planes, N. ^{[2
]}

Haond, M. ^{[2
]}

Flandre, D. ^{[1
]}

Raskin, J. -P. ^{[1
]}

Kilchytska, V. ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM Inst, Louvain La Neuve, Belgium

[2] STMicroelectronics, Crolles, France

来源：

2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2015年

关键词：

28; nm; FDSOI; bulk; self-heating; EXTRACTION;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work self-heating and its effect on device parameters are compared in 28 nm technology bulk and FDSOI MOS devices. It is found that the thermal resistance is similar to 3.4 times higher and the temperature rise is similar to 2.5 times higher in FDSOI than in bulk. However, in spite of stronger self-heating, FDSOI devices outperform bulk over a wide frequency range. Moreover, device parameters degradation with temperature is attenuated in FDSOI transistors.

引用

页码：41 / 44

页数：4

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