Gruneisen parameter of the G mode of strained monolayer graphene

被引：84

作者：

Cheng, Y. C. ^{[1
]}

Zhu, Z. Y. ^{[1
]}

Huang, G. S. ^{[2
,3
]}

Schwingenschloegl, U. ^{[1
]}

机构：

[1] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

[2] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 11期

关键词：

CARBON NANOTUBES;

D O I：

10.1103/PhysRevB.83.115449

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a detailed analysis of the effects of uniaxial and biaxial strain on the frequencies of the G mode of monolayer graphene, using first principles calculations. Our results allow us to explain discrepancies in the experimentally determined values of the Gruneisen parameter. The direction and strength of the applied strain, Poisson's ratio of the substrate, and the intrinsic strain in different experimental setups turn out to be important. A reliable determination of the Gruneisen parameter is a prerequisite of strain engineering.

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页数：5

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