Effect of compression on the electronic, optical and transport properties of MoS2/graphene-based junctions

Electronic, optical and transport properties of the MoS2/graphene heterostructure have been investigated as function of applied uniaxial compression normal to the interface plane using first principles calculations and a non-equilibrium Green's function approach. The results show that a small compressive load (similar to 1 GPa) can open up the band gap (similar to 12 meV), reduce the optical absorption coefficient (,7%), redshift the absorption spectrum, and create non-Ohmic I Vcharacteristics that depend on the magnitude of applied bias. This suggests that graphene/MoS2 heterostructure can be suitable for electromechanical and photomechanical devices where the electronic, optical and transport properties can be tuned by an appropriate application of bias and mechanical deformations.