Influence of Substrate Temperature and Radio Frequency Power to TiO2 on Electrical, Optical and Structure Properties of Titanium Doped Indium Oxide

Ti-doped In2O3(Ti-InO) films were prepared by radio frequency (RF) co-sputtering method of TiO2 and In2O3 targets on glass substrates at various growth temperatures ranging from 100 degrees C to 400 degrees C in argon gas. The sputtering power on the In2O3 target was fixed to 30 W, whereas the power to the TiO2 target was varied from 0 to 40 W. The influence of the sputtering power on the TiO2 target and growth temperature on the structural, electrical, and optical properties of the deposited thin films were investigated. All deposited films had a polycrystalline nature. On the other hand, degradation of the crystallinity of the grown films tended to deteriorate when the power to the TiO2 target was higher than 20 W. A lower resistivity (2 . 6x10(-4) cm) and higher mobility (88 cm(2)/V . s) were obtained in the Ti-InO films than the pure In2O3 films. All deposited Ti-InO films showed high transmittances over 80% in the visible wavelength range. The figure of merits were obtained to compare the films according to the growth temperature and power to the TiO2 target. The highest value was 46191 Omega(-1) cm(-1) at a RF power of 15 W with a growth temperature of 400 degrees C.