GC-MS Investigation of Organosilicon and Fluorocarbon Fed Plasmas

被引：6

作者：

Fanelli, F. ^{[1
]}

Fracassi, F. ^{[1
]}

Lovascio, S. ^{[1
]}

d'Agostino, R. ^{[1
]}

机构：

[1] Univ Bari Aldo Moro, Dept Chem, CNR, IMIP, Bari, Italy

来源：

CONTRIBUTIONS TO PLASMA PHYSICS | 2011年 / 51卷 / 2-3期

关键词：

Gascromatography-mass spectrometry; organosilicons; fluorocarbons; atmospheric pressure DBD; PRESSURE PE-CVD; ATMOSPHERIC-PRESSURE; THIN-FILMS; DEPOSITION; OXYGEN; DISCHARGES; HMDSO;

D O I：

10.1002/ctpp.201000051

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

This paper deals with the GC-MS investigation of the exhaust gas of atmospheric pressure PE-CVD processes in organosilicon- and fluorocarbon-containing dielectric barrier discharges. The extent of unreacted monomer and the quali-quantitative distribution of by-products have been investigated as a function of the feed composition. The results confirm that GC-MS is a powerful indirect diagnostic technique of the plasma phase since it allows to hypothesize some of the reactive moieties formed in the plasma and to clarify some aspects of the deposition mechanism. (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：137 / 142

页数：6

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