Selenium-Containing Fused Bicyclic Heterocycle Diselenolodiselenole: Field Effect Transistor Study and Structure Property Relationship

被引:29
作者
Debnath, Sashi [1 ]
Chithiravel, Sundaresan [2 ]
Sharma, Sagar [3 ]
Bedi, Anjan [1 ]
Krishnamoorthy, Kothandam [2 ]
Zade, Sanjio S. [1 ]
机构
[1] IISER, Dept Chem Sci, Kolkata 741246, Mohanpur, India
[2] Natl Chem Lab, Network Inst Solar Energy, CSIR, Polymer Sci & Engn Div, Dr Homi Bhabha Rd, Pune 411008, Maharashtra, India
[3] IASST, Div Phys Sci, Paschim Boragaon 781035, Guwahati, India
关键词
diselenolodiselenole; organic field effect transistor; selenium; diselenocyclization; spectroelectrochemistry; charge transport; THIN-FILM TRANSISTORS; EXPANDED NAPHTHALENE DIIMIDES; ORGANIC SEMICONDUCTORS; HIGH-PERFORMANCE; SMALL MOLECULES; ELECTROCHROMIC DEVICES; POLYMERS; AIR; DERIVATIVES; OLIGOMERS;
D O I
10.1021/acsami.6b02154
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The first application of the diselenolodiselenole (C4Se4) heterocycle as an active organic field effect transistor materials is demonstrated here. C4Se4 derivatives (2a-2d) were obtained by using a newly developed straightforward diselenocyclization protocol, which includes the reaction of diynes with selenium powder at elevated temperature. C4Se4 derivatives exhibit strong donor characteristics and planar structure (except 2d). The atomic force microscopic analysis and thin-film X-ray diffraction pattern of compounds 2a-2d indicated the formation of distinct crystalline films that contain large domains. A scanning electron microscopy study of compound 2b showed development of symmetrical grains with an average diameter of 150 nm. Interestingly, 2b exhibited superior hole mobility, approaching 0.027 cm(2) V-1 s(-1) with a transconductance of 9.2 mu S. This study correlate the effect of p-stacking, Se center dot center dot center dot Se intermolecular interaction, and planarity with the charge transport properties and performance in the field effect transistor devices. We have shown that the planarity in C4Se4 derivatives was achieved by varying the end groups attached to the C4Se4 core. In turn, optoelectronic properties can also be tuned for all these derivatives by end-group variation.
引用
收藏
页码:18222 / 18230
页数:9
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