Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

被引:11
作者
Koh, M [1 ]
Horita, K [1 ]
Shigeta, B [1 ]
Igarashi, K [1 ]
Matsukawa, T [1 ]
Tanii, T [1 ]
Mori, S [1 ]
Ohdomari, I [1 ]
机构
[1] WASEDA UNIV,KAGAMI MEM LAB MAT SCI & TECHNOL,SHINJUKU KU,TOKYO 169,JAPAN
关键词
D O I
10.1063/1.116076
中图分类号
O59 [应用物理学];
学科分类号
摘要
Localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistor (n-ch MOSFET) have been investigated quantitatively by means of both the single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. An extremely large leakage current in the subthreshold gate voltage V-g-drain current I-d characteristics (V-g < threshold voltage V-th) have been induced by exposing a small fraction of the MOSFET gate area to MeV He single ions, while the turn-on V-g-I-d characteristics (V-g > V-th) have scarcely been affected. The causes of the large leakage current in the subthreshold region induced by the localized ion irradiation have been discussed. (C) 1996 American Institute of Physics.
引用
收藏
页码:3467 / 3469
页数:3
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