Tuning the graphene work function by uniaxial strain

被引：31

作者：

He, Xin ^{[1
]}

Tang, Ning ^{[1
]}

Sun, Xiaoxiao ^{[1
]}

Gan, Lin ^{[2
]}

Ke, Fen ^{[1
]}

Wang, Tao ^{[1
]}

Xu, Fujun ^{[1
]}

Wang, Xinqiang ^{[1
,3
]}

Yang, Xuelin ^{[1
]}

Ge, Weikun ^{[4
]}

Shen, Bo ^{[1
,3
]}

机构：

[1] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Huazhong Univ Sci & Technol, Coll Mat Sci & Engn, Wuhan 430074, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 04期

基金：

中国国家自然科学基金;

关键词：

TRANSPORT;

D O I：

10.1063/1.4906995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Forming good metal/graphene contact is of significance in making graphene devices, while tuning the graphene work function is a valid approach to decrease the contact barrier and then achieve electrodes with low contact resistance. A strain device has been fabricated to apply uniaxial strain to graphene grown by chemical vapor deposition method, and Kelvin probe force microscopy was used to measure the work function of the graphene under strain. The work function of the graphene is found to increase as strain increases. By applying a uniaxial strain of 7%, the work function can be adjusted as large as 0.161 eV. Such a result can be explained by strain induced increase of the density of states in graphene. (C) 2015 AIP Publishing LLC.

引用

页数：4

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