Study of the metal-semiconductor contact to ZnO films

被引：11

作者：

Yan, Yu ^{[1
]}

Mi, Wei ^{[1
]}

Zhao, Jinshi ^{[1
]}

Yang, Zhengchun ^{[1
]}

Zhang, Kailiang ^{[1
]}

Luan, Chongbiao ^{[2
]}

机构：

[1] Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, 391 West Binshui Rd, Tianjin 300384, Peoples R China

[2] China Acad Engn Phys, Inst Fluid Phys, Mianshan Rd 64, Mianyang 621999, Sichuan, Peoples R China

来源：

VACUUM | 2018年 / 155卷

基金：

中国国家自然科学基金;

关键词：

ZnO; Thin films; Ohmic contact; THIN-FILMS; OHMIC CONTACTS; SOLAR-CELLS; FABRICATION; DEPOSITION;

D O I：

10.1016/j.vacuum.2018.06.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High resistance Zinc oxide (ZnO) films have been prepared on Si (100) substrates using magnetron sputtering method. Structure analysis revealed a clear out-of-plane orientation of ZnO (001) parallel to Si (100). The metallic composition of the contact is a critically important parameter for making ohmic contacts to ZnO films. Al/Ti metal contacts show linear I-V characteristics indicative of ohmic behavior, while other metal contacts such as Al and Ti show nonlinear characteristics with rectification, that reveal the presence of schottky barriers.

引用

页码：210 / 213

页数：4

共 16 条

[11] Fabrication of homostructural ZnO p-n junctions and ohmic contacts to arsenic-doped p-type ZnO [J].