Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures

被引：18

作者：

Tikhov, S. V. ^{[1
]}

Gorshkov, O. N. ^{[1
,2
]}

Koryazhkina, M. N. ^{[1
]}

Antonov, I. N. ^{[1
,2
]}

Kasatkin, A. P. ^{[1
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ Nizhny Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 05期

关键词：

STABILIZED ZIRCONIA; OXIDE;

D O I：

10.1134/S1063785016050308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied light-induced resistive switching in metal-insulator-semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

引用

页码：536 / 538

页数：3

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