Single-crystalline CoSi2 layer formation by focused ion beam synthesis

被引：9

作者：

Hausmann, S ^{[1
]}

Bischoff, L ^{[1
]}

Teichert, J ^{[1
]}

Voelskow, M ^{[1
]}

Möller, W ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 12B期

关键词：

focused ion beam; ion implantation; cobalt disilicide; radiation damage; damage accumulation; dwell time; ion beam synthesis;

D O I：

10.1143/JJAP.38.7148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of accumulated radiation damage which arise from the excessive current density employed during focused ion beam implantation are described. The dwell time during beam scanning significantly influences the focused ion beam synthesis of CoSi2 in Si. At sufficiently low accumulated damage, single-crystalline CoSi2 layers are obtained, similarly to conventional ion implantation. A procedure is described which enables the reduction of radiation damage induced by a focused ion beam to the level of conventional ion implantation. This is of importance for the formation of single-crystalline CoSi2 layers.

引用

页码：7148 / 7150

页数：3

共 16 条

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