Photocurrent spectra of heavily doped terahertz quantum well photodetectors

被引：12

作者：

Guo, X. G. ^{[1
,2
]}

Zhang, R. ^{[1
,2
]}

Liu, H. C. ^{[2
]}

SpringThorpe, A. J. ^{[2
]}

Cao, J. C. ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

基金：

中国国家自然科学基金;

关键词：

INFRARED PHOTODETECTORS; HETEROSTRUCTURES; RELAXATION; EXCHANGE;

D O I：

10.1063/1.3458829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Terahertz (THz) quantum well photodetectors (QWPs) are an important candidate for THz imaging and THz free space communication. Low absorption efficiency of THz QWPs is the main factor limiting the performance of this kind of THz detectors. To increase the absorption efficiency, three heavily doped THz QWPs were fabricated. The band structure calculations show that the second subband falls into the quantum well with increasing Si doping concentration, which decreases the escape probability of the photon-excited electrons in the second subband. This effect is responsible for the blueshift and broadening of the photocurrent peak with increasing Si doping. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458829]

引用

页数：3

共 15 条

[1] Microscopic theory of vertical-transport phenomena in semiconductor heterostructures: Interplay between two- and three-dimensional hot-carrier relaxation [J].