Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

Controlled and reproducible growth of GaN nanowires is demonstrated by pulsed low-pressure metalorganic chemical vapor deposition. Using self-assembled Ni nanodots as nucleation sites on (0001) sapphire substrates we obtain nanowires of wurtzite-phase GaN with hexagonal cross sections, diameters of about 100 nm, and well-controlled length. The nanowires are highly oriented and perpendicular to the growth surface. The wires have excellent structural and optical properties, as determined by x-ray diffraction, cathodoluminescence, and Raman scattering. The x-ray measurements show that the nanowires are under a complex strain state consistent with a superposition of hydrostatic and biaxial components. (C) 2005 American Institute of Physics.