A simple method to synthesize α-Si3N4, β-SiC and SiO2 nanowires by carbothermal route

被引:18
作者
Wang, Qiushi [1 ]
Cong, Ridong [1 ]
Li, Min [1 ]
Zhang, Jian [1 ]
Cui, Qiliang [1 ]
机构
[1] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China
基金
高等学校博士学科点专项科研基金;
关键词
Nanostructures; Growth from vapor; Nitrides; Nanomaterials; SILICON; GROWTH;
D O I
10.1016/j.jcrysgro.2010.03.039
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
alpha-Si3N4 nanowires, beta-SiC nanowires and SiO2 amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The alpha-Si3N4 nanowires, beta-SiC nanowires and SiO2 amorphous nanowires are about 50-200 nm in stem diameter and 10-100 mu m in length. alpha-Si3N4 nanowires and beta-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiOx layer. The direct current arc plasma-assisted self-catalytic vapor-solid and/or vapor-liquid-solid (VLS) growth processes are proposed as the growth mechanism of the nanowires. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:2133 / 2136
页数:4
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