Dark current filtering in unipolar barrier infrared detectors

被引：84

作者：

Savich, G. R. ^{[1
]}

Pedrazzani, J. R. ^{[1
]}

Sidor, D. E. ^{[1
]}

Maimon, S. ^{[1
]}

Wicks, G. W. ^{[1
]}

机构：

[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 12期

关键词：

SURFACE LEAKAGE CURRENTS;

D O I：

10.1063/1.3643515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Control of dark current mechanisms is essential to improving the performance of infrared photodetectors and many other electronic devices. Unipolar barriers can readily be applied to practically and efficiently filter out multiple dark current components exhibited by infrared photodetectors. Via careful placement of unipolar barriers in a standard photodetector architecture, effective suppression of dark currents due to surface leakage, direct band-to-band tunneling, trap-assisted tunneling, and Shockley-Read-Hall generation is demonstrated. We present unipolar barrier photodiodes exhibiting six orders of magnitude improvement in R(o)A and near Auger-limited device performance. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643515]

引用

页数：3

共 10 条

[1] Growth and characterization of vertical cavity structures on InP with GaAsSb AlAsSb Bragg mirrors for 1.55 μm emission [J].

Genty, F ;

Almuneau, G ;

Chusseau, L ;

Wilk, A ;

Gaillard, S ;

Boissier, G ;

Grech, P ;

Jacquet, J .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :1024-1027

[2] nBn detector, an infrared detector with reduced dark current and higher operating temperature [J].

Maimon, S. ;

Wicks, G. W. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[3] Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors [J].

Pedrazzani, J. R. ;

Maimon, S. ;

Wicks, G. W. .

ELECTRONICS LETTERS, 2008, 44 (25) :1487-+

[4]

Rogalski A., 2000, Narrow-Gap Semiconductor Photo- diodes

[5] Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors [J].

Savich, G. R. ;

Pedrazzani, J. R. ;

Maimon, S. ;

Wicks, G. W. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10) :2540-2543

[6] Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers [J].

Savich, G. R. ;

Pedrazzani, J. R. ;

Maimon, S. ;

Wicks, G. W. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03)

[7] MBE HgCdTe technology: A very general solution to IR detection, described by "Rule 07", a very convenient heuristic [J].

Tennant, W. E. ;

Lee, Donald ;

Zandian, Majid ;

Piquette, Eric ;

Carmody, Michael .

JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (09) :1406-1410

[8] EFFECT OF TRAP TUNNELING ON THE PERFORMANCE OF LONG-WAVELENGTH HG1-XCDXTE PHOTO-DIODES [J].

WONG, JY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :48-57

[9] Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes [J].

Yang, QK ;

Fuchs, F ;

Schmitz, J ;

Pletschen, W .

APPLIED PHYSICS LETTERS, 2002, 81 (25) :4757-4759

[10] ACCURATE CONTROL OF AS AND SB INCORPORATION RATIO DURING SOLID-SOURCE MOLECULAR-BEAM EPITAXY [J].

ZHANG, YH .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :838-843

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