Crossover of magnetoresistance from positive to negative in La0.5Sr0.5CoO3-σ/Si heterostructure

被引：3
|
作者：
Jin, K. X. [1 ]
Li, H. [1 ]
Wang, J. Y. [1 ]
Tan, X. Y. [1 ]
Zhao, S. G. [1 ]
Chen, C. L. [1 ]
机构：
[1] Northwestern Polytech Univ, Dept Appl Phys, Xian 710072, Peoples R China
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 13期
基金：
中国国家自然科学基金;
关键词：
Heterostructure; Rectifying characteristics; Magnetoresistance; TRANSPORT-PROPERTIES; MAGNETIC-PROPERTIES; FILMS; TEMPERATURE; HETEROJUNCTION; RESISTIVITY; SILICON; FIELD;
D O I：
10.1016/j.tsf.2012.02.050
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetoresistance (MR) properties of a heterostructure fabricated by depositing a La0.5Sr0.5CoO3-sigma film on an n-type Si substrate have been studied. The heterostructure exhibits a good rectifying behavior. A negative MR at T=210 K and a positive MR at T=300 K are observed for all bias currents whereas; for temperatures ranging from 240 to 280 K the MR changes from being positive to negative with the increase of the bias current. The observed behavior of the MR effect is discussed in terms of current-induced ferromagnetic spin order. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：4493 / 4496
页数：4
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